半导体材料

发展

1833年，英國的法拉第發現硫化銀是半導體材料，因為它的電阻隨著溫度上升而降低。
1874年，德國的布勞恩注意到硫化物的電導率與所加電壓的方向有關，這就是半導體的整流作用。
1947年12月23日，巴丁与布拉坦進一步使用點接觸電晶體製作出一個語音放大器，電晶體正式發明。
1958年9月12日，美國的基尔比，細心地切了一塊鍺作為電阻，再用一塊pn接面做為電容，製造出一個震盪器電路。

分类

以原料分为：

元素半导体材料：以单一元素组成的半导体，属于这一材料的有硼、金刚石、锗、硅、灰锡、锑、硒、碲等，其中以锗、硅、锡研究较早，制备工艺相对成熟。
材料：由两种或两种以上无机物化合成的半导体，种类繁多，已知的二元化合物就有数百种。
- 三五半导体：由Ⅲ族元素（如Al、Ga、In）和Ⅴ族元素（如P、As、Sb）组成，比如砷化鎵（GaAs）；它们都具有闪锌矿结构，在应用方面仅次于Ge、Si。
- 二六半导体：ⅡB族元素（如Zn、Cd、Hg）和Ⅵ族元素（如S、Se、Te）組成的化合物，是一些重要的光电材料；硫化鋅（ZnS）、碲化鎘（CdTe）、碲化汞（HgTe）具有闪锌矿结构。
- 四四半导体：碳化矽（SiC）和矽鍺合金都具有闪锌矿结构。
有機半導體：同時是有機物質的半導體。

列表

半導體材料列表
族	元素		化學式	能隙 (eV)	直接帶隙和間接帶隙
IV	1	硅	Si	1.12[1][2]	間接带隙
IV	1	Germanium	Ge	0.67[1][2]	間接帶隙
IV	1	Material properties of diamond	C	5.47[1][2]	間接帶隙
IV	1	锡, α-Sn	Sn	0[3][4]	半金属 (能带理论)
IV	2	碳化硅, 3C-SiC	SiC	2.3[1]	間接帶隙
IV	2	碳化硅, 4H-SiC	SiC	3.3[1]	間接帶隙
IV	2	碳化硅, 6H-SiC	SiC	3.0[1]	間接帶隙
VI	1	硫, 硫的同素异形体	S₈	2.6[5]
VI	1	硒	Se	1.83 - 2.0[6]	間接帶隙
VI	1	硒	Se	2.05	間接帶隙
VI	1	碲	Te	0.33[7]
III-V	2	氮化硼, cubic	BN	6.36[8]	間接帶隙
III-V	2	氮化硼, hexagonal	BN	5.96[8]	quasi-direct
III-V	2	氮化硼	BN	5.5[9]
III-V	2	磷化硼	BP	2.1[10]	間接帶隙
III-V	2	砷化硼	BAs	1.82	直接帶隙
III-V	2	砷化硼	B₁₂As₂	3.47	間接帶隙
III-V	2	氮化鋁	AlN	6.28[1]	直接帶隙
III-V	2	磷化铝	AlP	2.45[2]	間接帶隙
III-V	2	砷化铝	AlAs	2.16[2]	間接帶隙
III-V	2	锑化铝	AlSb	1.6/2.2[2]	直接帶隙/direct
III-V	2	氮化鎵	GaN	3.44[1][2]	直接帶隙
III-V	2	磷化鎵	GaP	2.26[1][2]	間接帶隙
III-V	2	Gallium arsenide	GaAs	1.42[1][2]	直接帶隙
III-V	2	銻化鎵	GaSb	0.73[1][2]	直接帶隙
III-V	2	氮化銦	InN	0.7[1]	直接帶隙
III-V	2	磷化銦	InP	1.35[1]	直接帶隙
III-V	2	砷化铟	InAs	0.36[1]	直接帶隙
III-V	2	锑化铟	InSb	0.17[1]	直接帶隙
II-VI	2	硒化镉	CdSe	1.74[2]	直接帶隙
II-VI	2	硫化镉	CdS	2.42[2]	直接帶隙
II-VI	2	碲化镉	CdTe	1.49[2]	直接帶隙
II-VI	2	氧化鋅	ZnO	3.37[2]	直接帶隙
II-VI	2	硒化锌	ZnSe	2.7[2]	直接帶隙
II-VI	2	硫化锌	ZnS	3.54/3.91[2]	直接帶隙
II-VI	2	碲化锌	ZnTe	2.3[2]	直接帶隙
I-VII	2	氯化亚铜	CuCl	3.4[11]	直接帶隙
I-VI	2	Copper sulfide	Cu₂S	1.2[10]	間接帶隙
IV-VI	2	硒化铅	PbSe	0.26[7]	直接帶隙
IV-VI	2	硫化铅	PbS	0.37[12]
IV-VI	2	碲化铅	PbTe	0.32[1]
IV-VI	2	硫化亚锡	SnS	1.3/1.0[13]	直接帶隙/間接帶隙
IV-VI	2	二硫化锡	SnS₂	2.2[14]
IV-VI	2	碲化亚锡	SnTe	0.18
IV-VI	3	Lead tin telluride	Pb_1−xSn_xTe	0-0.29
V-VI	2	碲化鉍	Bi₂Te₃	0.13[1]
II-V	2	磷化镉	Cd₃P₂	0.5[15]
II-V	2	砷化鎘	Cd₃As₂	0
II-V	2	磷化锌	Zn₃P₂	1.5[16]	直接帶隙
II-V	2	二磷化锌	ZnP₂	2.1[17]
II-V	2	砷化锌	Zn₃As₂	1.0[18]
II-V	2	锑化锌	Zn₃Sb₂
氧	2	二氧化鈦, 锐钛矿	TiO₂	3.20[19]	間接帶隙
氧	2	二氧化鈦, 金红石	TiO₂	3.0[19]	直接帶隙
氧	2	二氧化鈦, 板鈦礦	TiO₂	3.26[19]
氧	2	氧化亚铜	Cu₂O	2.17[20]
氧	2	氧化铜	CuO	1.2
氧	2	二氧化鈾	UO₂	1.3
氧	2	二氧化锡	SnO₂	3.7
氧	3	钛酸钡	BaTiO₃	3
氧	3	钛酸锶	SrTiO₃	3.3
氧	3	铌酸锂	LiNbO₃	4
V-VI	2	monoclinic 二氧化钒	VO₂	0.7[21]	光學帶隙
	2	碘化鉛	PbI₂	2.4[22]
	2	二硫化钼	MoS₂	1.23 eV (2H)[23]	間接帶隙
	2	Gallium(II) selenide	GaSe	2.1	間接帶隙
	2	硒化铟	InSe	1.26-2.35 eV[24]	直接帶隙 (2D間接帶隙)
	2	硫化亚锡	SnS	>1.5 eV	直接帶隙
	2	硫化铋	Bi₂S₃	1.3[1]
Magnetic, diluted (DMS)[25]	3	Gallium manganese arsenide	GaMnAs
Magnetic, diluted (DMS)	3	Lead manganese telluride	PbMnTe
	4	Lanthanum calcium manganate	La_0.7Ca_0.3MnO₃
	2	氧化亚铁	FeO	2.2 [26]
	2	一氧化镍	NiO	3.6–4.0	直接帶隙[27][28]
	2	Europium(II) oxide	EuO
	2	硫化亚铕	EuS
	2	溴化铬	CrBr₃
其它	3	Copper indium selenide, CIS	CuInSe₂	1	直接帶隙
其它	3	Silver gallium sulfide	AgGaS₂
其它	3	Zinc silicon phosphide	ZnSiP₂	2.0[10]
其它	2	三硫化二砷雌黃	As₂S₃	2.7[29]	直接帶隙
其它	2	硫化砷雄黄	As₄S₄
其它	2	Platinum silicide	PtSi
其它	2	碘化铋	BiI₃
其它	2	碘化汞	HgI₂
其它	2	溴化亚铊	TlBr	2.68[30]
其它	2	硫化银	Ag₂S	0.9[31]
其它	2	Iron disulfide	FeS₂	0.95[32]
其它	4	Copper zinc tin sulfide, CZTS	Cu₂ZnSnS₄	1.49	直接帶隙
其它	4	Copper zinc antimony sulfide, CZAS	Cu_1.18Zn_0.40Sb_1.90S_7.2	2.2[33]	直接帶隙
其它	3	Copper tin sulfide, CTS	Cu₂SnS₃	0.91[10]	直接帶隙

合金表

半導體材料合金列表
族	元素	材料	化學式	能隙 (eV)		直接帶隙和間接帶隙
族	元素	材料	化學式	下	上	直接帶隙和間接帶隙
IV-VI	3	Lead tin telluride	Pb_1−xSn_xTe	0	0.29
IV	2	矽鍺	Si_1−xGe_x	0.67	1.11[1]	直接帶隙/間接帶隙
IV	2	Silicon-tin	Si_1−xSn_x	1.0	1.11	間接帶隙
III-V	3	Aluminium gallium arsenide	Al_xGa_1−xAs	1.42	2.16[1]	直接帶隙/間接帶隙
III-V	3	Indium gallium arsenide	In_xGa_1−xAs	0.36	1.43	直接帶隙
III-V	3	磷化銦鎵	In_xGa_1−xP	1.35	2.26	直接帶隙/間接帶隙
III-V	3	Aluminium indium arsenide	Al_xIn_1−xAs	0.36	2.16	直接帶隙/間接帶隙
III-V	3	Aluminium gallium antimonide	Al_xGa_1−xSb	0.7	1.61	直接帶隙/間接帶隙
III-V	3	Aluminium indium antimonide	Al_xIn_1−xSb	0.17	1.61	直接帶隙/間接帶隙
III-V	3	Gallium arsenide nitride	GaAsN
III-V	3	Gallium arsenide phosphide	GaAsP	1.43	2.26	直接帶隙/間接帶隙
III-V	3	Aluminium arsenide antimonide	AlAsSb	1.61	2.16	間接帶隙
III-V	3	Gallium arsenide antimonide	GaAsSb	0.7	1.42[1]	直接帶隙
III-V	3	Aluminium gallium nitride	AlGaN	3.44	6.28	直接帶隙
III-V	3	Aluminium gallium phosphide	AlGaP	2.26	2.45	間接帶隙
III-V	3	Indium gallium nitride	InGaN	2	3.4	直接帶隙
III-V	3	Indium arsenide antimonide	InAsSb	0.17	0.36	直接帶隙
III-V	3	Indium gallium antimonide	InGaSb	0.17	0.7	直接帶隙
III-V	4	Aluminium gallium indium phosphide	AlGaInP			直接帶隙/間接帶隙
III-V	4	Aluminium gallium arsenide phosphide	AlGaAsP
III-V	4	Indium gallium arsenide phosphide	InGaAsP
III-V	4	Indium gallium arsenide antimonide	InGaAsSb
III-V	4	Indium arsenide antimonide phosphide	InAsSbP
III-V	4	Aluminium indium arsenide phosphide	AlInAsP
III-V	4	Aluminium gallium arsenide nitride	AlGaAsN
III-V	4	Indium gallium arsenide nitride	InGaAsN
III-V	4	Indium aluminium arsenide nitride	InAlAsN
III-V	4	Gallium arsenide antimonide nitride	GaAsSbN
III-V	5	Gallium indium nitride arsenide antimonide	GaInNAsSb
III-V	5	Gallium indium arsenide antimonide phosphide	GaInAsSbP
II-VI	3	碲化鋅鎘, CZT	CdZnTe	1.4	2.2	直接帶隙
II-VI	3	Mercury cadmium telluride	HgCdTe	0	1.5
II-VI	3	Mercury zinc telluride	HgZnTe	0	2.25
II-VI	3	Mercury zinc selenide	HgZnSe
II-V	4	Zinc cadmium phosphide arsenide	(Zn_1−xCd_x)₃(P_1−yAs_y)₂[34]	0[35]	1.5[36]
其它	4	Copper indium gallium selenide, CIGS	Cu(In,Ga)Se₂	1	1.7	直接帶隙

參見

有機半導體

參考文獻

. www.ioffe.ru. [2010-07-10]. （原始内容存档于2015-09-28）.
Safa O. Kasap; Peter Capper. . Springer. 2006: 54,327. ISBN 978-0-387-26059-4.
S.H. Groves, C.R. Pidgeon, A.W. Ewald, R.J. Wagner Journal of Physics and Chemistry of Solids, Volume 31, Issue 9, September 1970, Pages 2031-2049 (1970). Interband magnetoreflection of α-Sn.
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This article is issued from Wikipedia. The text is licensed under Creative Commons - Attribution - Sharealike. Additional terms may apply for the media files.

[ioffe-1] . www.ioffe.ru. [2010-07-10]. （原始内容存档于2015-09-28）.

[safa-2] Safa O. Kasap; Peter Capper. . Springer. 2006: 54,327. ISBN 978-0-387-26059-4.

[3] S.H. Groves, C.R. Pidgeon, A.W. Ewald, R.J. Wagner Journal of Physics and Chemistry of Solids, Volume 31, Issue 9, September 1970, Pages 2031-2049 (1970). Interband magnetoreflection of α-Sn.

[4] . www.matweb.com.

[5] Abass, A. K.; Ahmad, N. H. . Journal of Physics and Chemistry of Solids. 1986, 47 (2): 143. Bibcode:1986JPCS...47..143A. doi:10.1016/0022-3697(86)90123-X.

[6] Todorov, T. . Nature Communications. 2017, 8 (1): 682. Bibcode:2017NatCo...8..682T. PMC 5613033 . PMID 28947765. S2CID 256640449. doi:10.1038/s41467-017-00582-9.

[dorf-7] Dorf, Richard. . CRC Press. 1993: 2235–2236. ISBN 0-8493-0185-8.

[bnbgap-8] Evans, D A; McGlynn, A G; Towlson, B M; Gunn, M; Jones, D; Jenkins, T E; Winter, R; Poolton, N R J. (PDF). Journal of Physics: Condensed Matter. 2008, 20 (7): 075233. Bibcode:2008JPCM...20g5233E. S2CID 52027854. doi:10.1088/0953-8984/20/7/075233. hdl:2160/612 .

[9] . www.matweb.com.

[Madelung-10] Madelung, O. . Birkhäuser. 2004: 1. ISBN 978-3-540-40488-0.

[klin-11] Claus F. Klingshirn. . Springer. 1997: 127. ISBN 978-3-540-61687-0.

[12] . www.matweb.com.

[13] Patel, Malkeshkumar; Indrajit Mukhopadhyay; Abhijit Ray. . Optical Materials. 26 May 2013, 35 (9): 1693–1699. Bibcode:2013OptMa..35.1693P. doi:10.1016/j.optmat.2013.04.034.

[14] Burton, Lee A.; Whittles, Thomas J.; Hesp, David; Linhart, Wojciech M.; Skelton, Jonathan M.; Hou, Bo; Webster, Richard F.; O'Dowd, Graeme; Reece, Christian; Cherns, David; Fermin, David J.; Veal, Tim D.; Dhanak, Vin R.; Walsh, Aron. . Journal of Materials Chemistry A. 2016, 4 (4): 1312–1318. doi:10.1039/C5TA08214E. hdl:10044/1/41359 .

[15] Haacke, G.; Castellion, G. A. . Journal of Applied Physics. 1964, 35 (8): 2484–2487. Bibcode:1964JAP....35.2484H. doi:10.1063/1.1702886.

[KimballMüller2009-16] Kimball, Gregory M.; Müller, Astrid M.; Lewis, Nathan S.; Atwater, Harry A. (PDF). Applied Physics Letters. 2009, 95 (11): 112103. Bibcode:2009ApPhL..95k2103K. ISSN 0003-6951. doi:10.1063/1.3225151.

[17] Syrbu, N. N.; Stamov, I. G.; Morozova, V. I.; Kiossev, V. K.; Peev, L. G. . Proceedings of the First International Symposium on the Physics and Chemistry of II-V Compounds. 1980: 237–242.

[Zn3As2-18] Botha, J. R.; Scriven, G. J.; Engelbrecht, J. A. A.; Leitch, A. W. R. . Journal of Applied Physics. 1999, 86 (10): 5614–5618. Bibcode:1999JAP....86.5614B. doi:10.1063/1.371569.

[:0-19] Rahimi, N.; Pax, R. A.; MacA. Gray, E. . Progress in Solid State Chemistry. 2016, 44 (3): 86–105. doi:10.1016/j.progsolidstchem.2016.07.002.

[20] O. Madelung; U. Rössler; M. Schulz (编). . . Landolt-Börnstein - Group III Condensed Matter. 41C: Non-Tetrahedrally Bonded Elements and Binary Compounds I. 1998: 1–4. ISBN 978-3-540-64583-2. doi:10.1007/10681727_62.

[21] Shin, S.; Suga, S.; Taniguchi, M.; Fujisawa, M.; Kanzaki, H.; Fujimori, A.; Daimon, H.; Ueda, Y.; Kosuge, K. . Physical Review B. 1990, 41 (8): 4993–5009. Bibcode:1990PhRvB..41.4993S. PMID 9994356. doi:10.1103/physrevb.41.4993.

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[band-23] Kobayashi, K.; Yamauchi, J. . Physical Review B. 1995, 51 (23): 17085–17095. Bibcode:1995PhRvB..5117085K. PMID 9978722. doi:10.1103/PhysRevB.51.17085.

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